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Samsung 4GB (1x 4GB) CL9 DDR3-1333 PC3-10600 1.5V 204-pin UDIMM RAM Module Capacity_16GB 5V Technology DDR3L Error Correction

SKU 4491221125
4.4
USD42.99 USD66.99

Pay in 4 interest-free payments of $10.75 Learn more

Shipping Estimate
USA
  • USA
  • CAN

Ships within 48 hours · Estimated delivery Aug 6 - Aug 11

Description

5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Single rank Configuration 8-chip 256M x8 Pieces in Kit 1 Compatibility

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (2x 4GB) DDR2 667 MT/s 240-pin FB-DIMM RAM kit from Kingston

M393A1G40EB1-CPB Capacity 8GB (1x 8GB) Brand Samsung Speed DDR4-2133 - 2133MT/s - PC4-17000 Voltage 1

5V Technology DDR3L Error Correction ECC Signal Processing Unbuffered Form Factor 240-pin EUDIMM CAS Latency CL11 Pieces in Kit 1 Compatibility

2xM378B2873FHS-CH9 Capacity 2GB (2x 1GB) Brand Samsung Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

Samsung 4GB (1x 4GB) CL9 DDR3-1333 PC3-10600 1.5V 204-pin UDIMM RAM Module Capacity_16GB 5V Technology DDR3L Error CorrectionProduct Overview This 4GB (1x 4GB) DDR3 1333 MT s RAM module from Samsung is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL9, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.

Exchange/Return Notes
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  • Final sale items are not eligible for returns or exchanges.
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