Pay in 4 interest-free payments of $6.00 Learn more
Ships within 48 hours · Estimated delivery Aug 8 - Aug 13
5V Technology DDR3 Error Correction ECC Signal Processing Registered Form Factor 240-pin RDIMM CAS Latency CL11 Pieces in Kit 1 Compatibility
Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 32GB (1x 32GB) DDR3 1866 MT/s 240-pin LRDIMM RAM module from Hynix
This 16GB (2x 8GB) DDR3L 1866 MT/s Dual rank
2xCT8G4WFD8266 Capacity 16GB (2x 8GB) Brand Crucial Speed DDR4-2666 - 2666MT/s - PC4-21300 Voltage 1
Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 16GB (1x 16GB) DDR4 2400 MT/s 260-pin SODIMM RAM module from Crucial
Samsung 512MB (2x 256MB) CL2.5 DDR-266 PC2100 2.5V SR x8 184-pin UDIMM RAM Kit System Type_Workstation 5V Technology DDR3 Error CorrectionProduct Overview This 512MB (2x 256MB) DDR 266 MT s Single rank, x8 configuration RAM kit from Samsung is for use in DDR compatible systems and operates at 266 MT s with an overall transfer rate of PC2100. This RAM kit also operates at a standard voltage of 2. 5V with a CAS Latency of CL2. 5, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical
US$ 749.50
US$ 299.50
US$ 1549.50
US$ 499.50
US$ 224.50
US$ 1440.00
US$ 425.00
US$ 564.50
US$ 269.50
US$ 2074.50
US$ 394.50
US$ 239.50
